Next-generation Light-Emitting Diode

Perovskite LED offers promising potential for next-generation light sources. By following a series of strategies, including ligand-passivation that synergistically covers the FAPbI3 quantum dots (QDs)/ hole- transporting layer surfaces and the introduction of a high-mobility electron-transporting layer, we realize a device performance that leads to a highly efficient NIR QLED centered at 772 nm with a maximum external quantum efficiency up to 15.4%, the highest record for perovskite-based NIR QLEDs