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Professor
電話:
+886 2 29809899 # 5313
電子郵件:
hphsu@mail.mcut.edu.tw
學歷:
PhD: Department of Electronic Engineering, National Taiwan University of Science & Technology, Taipei, Taiwan (2008)
網站:
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Department of Electronic Engineering and Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City, Taiwan
Dr. Hung-Pin Hsu is currently a full professor of the Department of Electronic Engineering, Ming Chi University of Technology (MCUT). His current research interests are mainly in semiconductor optical characterization, and understanding of novel optical and physics properties of semiconductor materials and their device structures. Until now, Dr. H. -P. Hsu has published over 30 international journal papers.
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研究興趣
Prof. H. -P. Hsu's research topic is semiconductor optical properties, optoelectronic semiconductor materials and devices His interests include:
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2D semiconductor materials
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Group IV semiconductor nanostructures
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III-V and II-VI novel semiconductors
精選期刊:
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D. Y. Lin, H. P. Hsu, H. S. Hu, Y. C. Yang, and W. Zhou, "Humidity sensing and photodetection based on tin disulfide nanosheets", Crystals, Vol. 11, Issue. 9, pp. 1028-1~1028-9 (2021). IF 2.589, Ranking factor: 9/25 (36%), CRYSTALLOGRAPHY
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D. Y. Lin, H. P. Hsu G. H. Liu, T. Z. Dai, and Y. T. Shih, "Enhanced photoresponsivity of 2H-MoTe2 by inserting 1T-MoTe2 interlayer contact for photodetector applications", Crystals, Vol. 11, Issue. 8, pp. 964-1~964-9 (2021) IF 2.589, Ranking factor: 9/25 (36%), CRYSTALLOGRAPHY
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D. Y. Lin, H. P. Hsu, C. F. Tsai, C. W. Wang, and Y. T. Shih, "Temperature dependent excitonic transition energy and enhanced electron-phonon coupling in layered ternary SnS2-xSex semiconductors with fully tunable stoichiometry", Molecules, Vol. 26, Issue. 8, pp. 2184-1~2184-10 (2021). IF 4.412, Ranking factor: 63/178 (35%), CHEMISTRY, MULTIDISCIPLINARY
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H. P. Hsu, P. H. Wu, J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. H. Lin, and K. K. Tiong, Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy, Japanese Journal of Applied Physics, Vol. 53, no. 5, pp. 051201-1~051201-4 (2014)
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P. H. Wu, Y. S. Huang, H. P. Hsu, C. Li, S. H. Huang, and K. K. Tiong, The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness, Applied Physics Letters, Vol. 104, no. 24, pp. 241605-1~241605-4 (2014)
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