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HUNG-PIN HSU Professor

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HUNG-PIN HSU

Professor

Department of Electronic Engineering

Education: PhD: Department of Electronic Engineering, National Taiwan University of Science & Technology, Taipei, Taiwan (2008)

02-2908-9899 Ext.5313

hphsu@mail.mcut.edu.tw

Academic journal

研發能量平台

Professor HUNG-PIN HSU is currently a professor in the Department of Electronic Engineering at Ming Chi University of Technology. His research interests primarily focus on the characterization of the optical properties of semiconductors and understanding the novel optical and physical properties of semiconductor materials and device structures. To date, Dr. Hsu has published over 30 papers in international journals.

Professor Hsu's research topics include the optical properties of semiconductors, optoelectronic semiconductor materials, and devices. His research interests include:

  • Two-Dimensional Semiconductor Materials
  • Nanomaterials of Group IV Semiconductors
  • Novel Semiconductors from Groups III-V and II-VI

Publications:  

  1. D. Y. Lin, H. P. Hsu, H. S. Hu, Y. C. Yang, and W. Zhou, "Humidity sensing and photodetection based on tin disulfide nanosheets", Crystals, Vol. 11, Issue. 9, pp. 1028-1~1028-9 (2021). IF 2.589, Ranking factor: 9/25 (36%), CRYSTALLOGRAPHY
  2. D. Y. Lin, H. P. Hsu, G. H. Liu, T. Z. Dai, and Y. T. Shih, "Enhanced photoresponsivity of 2H-MoTe2 by inserting 1T-MoTe2 interlayer contact for photodetector applications", Crystals, Vol. 11, Issue. 8, pp. 964-1~964-9 (2021) IF 2.589, Ranking factor: 9/25 (36%), CRYSTALLOGRAPHY
  3. D. Y. Lin, H. P. Hsu, C. F. Tsai, C. W. Wang, and Y. T. Shih, "Temperature dependent excitonic transition energy and enhanced electron-phonon coupling in layered ternary SnS2-xSex semiconductors with fully tunable stoichiometry", Molecules, Vol. 26, Issue. 8, pp. 2184-1~2184-10 (2021). IF 4.412, Ranking factor: 63/178 (35%), CHEMISTRY, MULTIDISCIPLINARY
  4. H. P. Hsu, P. H. Wu, J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. H. Lin, and K. K. Tiong, Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy, Japanese Journal of Applied Physics, Vol. 53, no. 5, pp. 051201-1~051201-4 (2014)
  5. P. H. Wu, Y. S. Huang, H. P. Hsu, C. Li, S. H. Huang, and K. K. Tiong, The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness, Applied Physics Letters, Vol. 104, no. 24, pp. 241605-1~241605-4 (2014)
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